能量滤波透射电镜在集成电路失效分析中的对比度增强和元素识别应用

W. Zhang, S. Ng, D. Cheong, S. Lim
{"title":"能量滤波透射电镜在集成电路失效分析中的对比度增强和元素识别应用","authors":"W. Zhang, S. Ng, D. Cheong, S. Lim","doi":"10.1109/IPFA.2003.1222766","DOIUrl":null,"url":null,"abstract":"In this paper, application of EFTEM, combined with EDAX in STEM mode, is addressed to structural and chemical characterization in 0.25 /spl mu/m technology node.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Application of energy-filtering TEM in contrast enhancement and elemental identification in IC failure analysis\",\"authors\":\"W. Zhang, S. Ng, D. Cheong, S. Lim\",\"doi\":\"10.1109/IPFA.2003.1222766\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, application of EFTEM, combined with EDAX in STEM mode, is addressed to structural and chemical characterization in 0.25 /spl mu/m technology node.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222766\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文以0.25 /spl mu/m技术节点为研究对象,利用EFTEM结合STEM模式下的EDAX进行结构和化学表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Application of energy-filtering TEM in contrast enhancement and elemental identification in IC failure analysis
In this paper, application of EFTEM, combined with EDAX in STEM mode, is addressed to structural and chemical characterization in 0.25 /spl mu/m technology node.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Real case studies of fast wafer level reliability (FWLR) EM test as process reliability monitor methodology Identify Optical Proximity Correction (OPC) issue in 0.13 /spl mu/m technology development Progressive breakdown statistics in ultra-thin silicon dioxides Failures in copper interconnects-localization, analysis and degradation mechanisms Reliability oriented process and device simulations of power VDMOS transistors in Bipolar/CMOS/DMOS technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1