一种新型CMOS-MEMS单质量验证三轴加速度计的设计与实现

Chih-Ming Sun, M. Tsai, W. Fang
{"title":"一种新型CMOS-MEMS单质量验证三轴加速度计的设计与实现","authors":"Chih-Ming Sun, M. Tsai, W. Fang","doi":"10.1109/MEMSYS.2009.4805506","DOIUrl":null,"url":null,"abstract":"This study presents a novel single proof-mass tri-axis capacitive CMOS MEMS accelerometer to reduce the footprint of chip. A serpentine out-of-plane (Z-axis) spring is designed to reduce cross-axis error. A magnetic actuation for Z-axis self-test is also presented. The tri-axis accelerometer has been successfully implemented using TSMC 2P4M process and our in-house post-process. Measurement results show that sensitivities (non-linearity) of etch direction are 0.53mV/G (2.64%) of X-axis, 0.28mV/G (3.15%) of Y-axis, and 0.2mV/G (3.36%) of Z-axis. The cross-axis sensitivities range from 1% to 8.3%, and the measurement range is between 0.8~6G, respectively.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Design and Implementation of a Novel CMOS-MEMS Single Proof-Mass Tri-Axis Accelerometer\",\"authors\":\"Chih-Ming Sun, M. Tsai, W. Fang\",\"doi\":\"10.1109/MEMSYS.2009.4805506\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study presents a novel single proof-mass tri-axis capacitive CMOS MEMS accelerometer to reduce the footprint of chip. A serpentine out-of-plane (Z-axis) spring is designed to reduce cross-axis error. A magnetic actuation for Z-axis self-test is also presented. The tri-axis accelerometer has been successfully implemented using TSMC 2P4M process and our in-house post-process. Measurement results show that sensitivities (non-linearity) of etch direction are 0.53mV/G (2.64%) of X-axis, 0.28mV/G (3.15%) of Y-axis, and 0.2mV/G (3.36%) of Z-axis. The cross-axis sensitivities range from 1% to 8.3%, and the measurement range is between 0.8~6G, respectively.\",\"PeriodicalId\":187850,\"journal\":{\"name\":\"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2009.4805506\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2009.4805506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

本研究提出一种新颖的单验证质量三轴电容式CMOS MEMS加速度计,以减少晶片的占地面积。设计了蛇形面外(z轴)弹簧以减小跨轴误差。提出了一种用于z轴自检的磁致动装置。该三轴加速度计已成功实现采用台积电2P4M工艺和我们的内部后处理。测量结果表明,腐蚀方向的灵敏度(非线性)分别为:x轴0.53mV/G(2.64%)、y轴0.28mV/G(3.15%)、z轴0.2mV/G(3.36%)。交叉轴灵敏度范围为1% ~ 8.3%,测量范围为0.8~6G。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design and Implementation of a Novel CMOS-MEMS Single Proof-Mass Tri-Axis Accelerometer
This study presents a novel single proof-mass tri-axis capacitive CMOS MEMS accelerometer to reduce the footprint of chip. A serpentine out-of-plane (Z-axis) spring is designed to reduce cross-axis error. A magnetic actuation for Z-axis self-test is also presented. The tri-axis accelerometer has been successfully implemented using TSMC 2P4M process and our in-house post-process. Measurement results show that sensitivities (non-linearity) of etch direction are 0.53mV/G (2.64%) of X-axis, 0.28mV/G (3.15%) of Y-axis, and 0.2mV/G (3.36%) of Z-axis. The cross-axis sensitivities range from 1% to 8.3%, and the measurement range is between 0.8~6G, respectively.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Thermal Characterization of Microliter Amounts of Liquids by a Micromachined Calorimetric Transducer Direct Etching of High Aspect Ratio Structures Through a Stencil Electrical Discharge based Microfabrication on Electrospun Nanofibers Supercritical Fluid Deposition (SCFD) Technique as a Novel Tool for MEMS Fabrication Novel Concept of Microwave MEMS Reconfigurable 7X45° Multi-Stage Dielectric-Block Phase Shifter
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1