MEMS x射线光学系统的x射线反射率评估

2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics Pub Date : 2008-08-26 DOI:10.1109/OMEMS.2008.4607850

I. Mitsuishi, Y. Ezoe, M. Koshiishi, M. Mita, Y. Maeda, N. Yamasaki, K. Mitsuda, T. Shirata, T. Hayashi, T. Takano, R. Maeda

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引用次数: 2

摘要

在0.28 keV和1.49 keV两种不同能量下，测量了采用MEMS技术的超轻型x射线光学器件的x射线反射率。得到的反射率可以通过考虑镜面结构来理解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evaluation of X-ray reflectivity of a MEMS X-ray optic

X-ray reflectivity of an ultra light-weight X-ray optic using MEMS technologies was measured in two different energies (0.28 keV and 1.49 keV). The obtained reflectivities can be understood by considering the mirror surface structures.

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2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics

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