{"title":"射频功率晶体管的三维表征","authors":"T. Arnborg, T. Johansson","doi":"10.1109/ICMTS.1999.766230","DOIUrl":null,"url":null,"abstract":"3D electromagnetic simulations and SPICE were used to model the influence of wire geometry, internal matching networks and package on the characteristics of high-power RF transistors for cellular base stations. A method for extracting the actual internal 3D geometries by applying SEM micrographs and Java software was developed. Measured transistor data was correlated with simulated data, and the importance of the contributing elements and the mutual coupling of the bond wires was demonstrated.","PeriodicalId":273071,"journal":{"name":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3D characterization of RF power transistors\",\"authors\":\"T. Arnborg, T. Johansson\",\"doi\":\"10.1109/ICMTS.1999.766230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"3D electromagnetic simulations and SPICE were used to model the influence of wire geometry, internal matching networks and package on the characteristics of high-power RF transistors for cellular base stations. A method for extracting the actual internal 3D geometries by applying SEM micrographs and Java software was developed. Measured transistor data was correlated with simulated data, and the importance of the contributing elements and the mutual coupling of the bond wires was demonstrated.\",\"PeriodicalId\":273071,\"journal\":{\"name\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1999.766230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1999.766230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
3D electromagnetic simulations and SPICE were used to model the influence of wire geometry, internal matching networks and package on the characteristics of high-power RF transistors for cellular base stations. A method for extracting the actual internal 3D geometries by applying SEM micrographs and Java software was developed. Measured transistor data was correlated with simulated data, and the importance of the contributing elements and the mutual coupling of the bond wires was demonstrated.
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