液氮温度下多极电路的开关特性

H.J. Chen, S. Nawaz, B.D. Urke, H. Vyas
{"title":"液氮温度下多极电路的开关特性","authors":"H.J. Chen, S. Nawaz, B.D. Urke, H. Vyas","doi":"10.1109/BIPOL.1988.51082","DOIUrl":null,"url":null,"abstract":"Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid- pi model. CML ring oscillators were fabricated using 1.0 mu m design rules. The measured delay at LN/sub 2/ increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Switching characteristics of poly bipolar circuits at liquid nitrogen temperature\",\"authors\":\"H.J. Chen, S. Nawaz, B.D. Urke, H. Vyas\",\"doi\":\"10.1109/BIPOL.1988.51082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid- pi model. CML ring oscillators were fabricated using 1.0 mu m design rules. The measured delay at LN/sub 2/ increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

给出了电流模式逻辑(CML)环形振荡器在液氮温度下的性能实测数据。采用双聚双极技术制备器件和电路。用混合pi模型对实验数据进行了解释。采用1.0 μ m设计规则制作CML环形振荡器。在LN/sub 2/处测量到的延迟比室温时增加了2.3倍。延迟的增加可以用基极电阻和负载电阻的温度行为来解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Switching characteristics of poly bipolar circuits at liquid nitrogen temperature
Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid- pi model. CML ring oscillators were fabricated using 1.0 mu m design rules. The measured delay at LN/sub 2/ increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
The best-case power-delay products for polysilicon-contacted bipolar-transistor gates. A theoretical study The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process Delay analysis for BiCMOS drivers Comparing techniques for fabrication polysilicon contacted emitter bipolar transistors Thin base formation by double diffused polysilicon technology
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1