{"title":"液氮温度下多极电路的开关特性","authors":"H.J. Chen, S. Nawaz, B.D. Urke, H. Vyas","doi":"10.1109/BIPOL.1988.51082","DOIUrl":null,"url":null,"abstract":"Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid- pi model. CML ring oscillators were fabricated using 1.0 mu m design rules. The measured delay at LN/sub 2/ increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Switching characteristics of poly bipolar circuits at liquid nitrogen temperature\",\"authors\":\"H.J. Chen, S. Nawaz, B.D. Urke, H. Vyas\",\"doi\":\"10.1109/BIPOL.1988.51082\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid- pi model. CML ring oscillators were fabricated using 1.0 mu m design rules. The measured delay at LN/sub 2/ increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51082\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Switching characteristics of poly bipolar circuits at liquid nitrogen temperature
Measured data are presented on performance of current mode logic (CML) ring oscillators at liquid nitrogen temperature. The devices and circuits were fabricated using double-poly bipolar technology. The experimental data are explained using the hybrid- pi model. CML ring oscillators were fabricated using 1.0 mu m design rules. The measured delay at LN/sub 2/ increased by a factor of 2.3 compared to that at room temperature. The increase in delay is explained by the temperature behavior of the base and load resistors.<>