在聚类工具中用高k材料制备栅极堆

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 1900-01-01 DOI:10.1109/ISSM.2001.962998

S. Gendt, M. Heyns, T. Conard, H. Hohira, O. Richard, Wilfried Vandervorst, M. Caymax, J. W. Maes, Marko Tuominen

{"title":"在聚类工具中用高k材料制备栅极堆","authors":"S. Gendt, M. Heyns, T. Conard, H. Hohira, O. Richard, Wilfried Vandervorst, M. Caymax, J. W. Maes, Marko Tuominen","doi":"10.1109/ISSM.2001.962998","DOIUrl":null,"url":null,"abstract":"Oxide layers of metals such as Zr and Al are possible candidates to replace SiO/sub 2/ as gate dielectric for sub-1 nm EOT (Equivalent Oxide Thickness). We discuss the use of a cluster tool featuring pre-cleaning, surface treatment, metal oxide deposition and electrode deposition modules. Contamination is found to be well within specifications. Throughput is reasonable and we indicate ways how to further improve it. We describe briefly the four modules, and give first process results. An EOT of 0.77 nm measured in a capacitor with a combined Al/sub 2/O/sub 3/, and ZrO/sub 2/ layer is presented. We discuss the importance of a cluster tool for this application based on those process results.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"2006 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Gate stack preparation with high-k materials in a cluster tool\",\"authors\":\"S. Gendt, M. Heyns, T. Conard, H. Hohira, O. Richard, Wilfried Vandervorst, M. Caymax, J. W. Maes, Marko Tuominen\",\"doi\":\"10.1109/ISSM.2001.962998\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Oxide layers of metals such as Zr and Al are possible candidates to replace SiO/sub 2/ as gate dielectric for sub-1 nm EOT (Equivalent Oxide Thickness). We discuss the use of a cluster tool featuring pre-cleaning, surface treatment, metal oxide deposition and electrode deposition modules. Contamination is found to be well within specifications. Throughput is reasonable and we indicate ways how to further improve it. We describe briefly the four modules, and give first process results. An EOT of 0.77 nm measured in a capacitor with a combined Al/sub 2/O/sub 3/, and ZrO/sub 2/ layer is presented. We discuss the importance of a cluster tool for this application based on those process results.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"2006 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962998\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

Zr和Al等金属氧化物层是替代SiO/sub - 2/作为1 nm以下EOT(等效氧化物厚度)栅极介电材料的可能候选材料。我们讨论了具有预清洗、表面处理、金属氧化物沉积和电极沉积模块的集束工具的使用。发现污染完全在规格范围内。吞吐量是合理的，并指出了进一步提高吞吐量的方法。简要介绍了四个模块，并给出了初步的工艺结果。在Al/sub - 2/O/sub - 3/和ZrO/sub - 2/复合层电容器中测量了0.77 nm的EOT。我们将根据这些过程结果讨论集群工具对该应用程序的重要性。

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Gate stack preparation with high-k materials in a cluster tool

Oxide layers of metals such as Zr and Al are possible candidates to replace SiO/sub 2/ as gate dielectric for sub-1 nm EOT (Equivalent Oxide Thickness). We discuss the use of a cluster tool featuring pre-cleaning, surface treatment, metal oxide deposition and electrode deposition modules. Contamination is found to be well within specifications. Throughput is reasonable and we indicate ways how to further improve it. We describe briefly the four modules, and give first process results. An EOT of 0.77 nm measured in a capacitor with a combined Al/sub 2/O/sub 3/, and ZrO/sub 2/ layer is presented. We discuss the importance of a cluster tool for this application based on those process results.

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2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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