{"title":"随机GaAs集成电路由射频测试处理器引起的ESD故障","authors":"Y. Anand, D. Crowe, A. Feinberg, C. Jones","doi":"10.1109/EOSESD.2000.890107","DOIUrl":null,"url":null,"abstract":"This paper describes a case study of GaAs IC ESD failures caused in a RF test handler. The test handler caused yield problems compared with another tester. A small insulator inside the test fixture assembly was found to generate up to 200 volt ESD pulses, causing sporadic device failures. This problem was resolved by replacing the insulator with a piece of static dissipative material. In this paper, we present tester investigation and evaluation, material investigation, experimental results, and conclusions from production follow-up.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Random GaAs IC's ESD failures caused by RF test handler\",\"authors\":\"Y. Anand, D. Crowe, A. Feinberg, C. Jones\",\"doi\":\"10.1109/EOSESD.2000.890107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a case study of GaAs IC ESD failures caused in a RF test handler. The test handler caused yield problems compared with another tester. A small insulator inside the test fixture assembly was found to generate up to 200 volt ESD pulses, causing sporadic device failures. This problem was resolved by replacing the insulator with a piece of static dissipative material. In this paper, we present tester investigation and evaluation, material investigation, experimental results, and conclusions from production follow-up.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Random GaAs IC's ESD failures caused by RF test handler
This paper describes a case study of GaAs IC ESD failures caused in a RF test handler. The test handler caused yield problems compared with another tester. A small insulator inside the test fixture assembly was found to generate up to 200 volt ESD pulses, causing sporadic device failures. This problem was resolved by replacing the insulator with a piece of static dissipative material. In this paper, we present tester investigation and evaluation, material investigation, experimental results, and conclusions from production follow-up.
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