敏捷晶圆厂无光刻离子注入技术

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 2001-10-08 DOI:10.1109/ISSM.2001.962927

T. Shibata, K. Sugoruo, K. Sughihara, K. Okumura, T. Nishihashi, K. Kashimoto, J. Fujiyama, Y. Sakurada, T. Gorou, N. Saji, M. Tsunoda

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引用次数: 6

摘要

为敏捷晶圆厂开发的一种新型离子注入机可以消除光阻光刻工艺中的离子注入过程。这种新的离子注入技术可以将排工艺时间、占地面积和拥有成本减少到传统离子注入技术的1/2以下。我们正在进一步开发这种离子注入器，并评估与离子注入相关的技术问题，这是一种适合制造亚微米集成电路器件的技术。基于对原型机的评估结果，我们将生产下一个/spl beta/-机器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Lithography-less ion implantation technology for agile fab

A new type of ion implanter developed for an agile fab can eliminate the processes concerned with photo resist lithography from the ion implantation process. This new ion implantation technology can reduce the row process time, footprint, and the cost of ownership to less than 1/2 that of conventional ion implantation technology. We are making further developments on this ion implanter and evaluating technical issues related to ion implantation, a technique suitable for manufacturing submicron IC devices. Based on the results of evaluating the prototype machine, we will produce the next /spl beta/-machine.

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2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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