牺牲硬掩模材料对先进技术BEOL集成的影响

2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2019-05-06 DOI:10.1109/ASMC.2019.8791788

E. Ramanathan, Lei Jiang, Q. Takmeel, Silvestre MaryClaire, AnbuSelvam KM Mahalingam, Somnath Ghosh, K. Donegan, A. Chandrasekar, Sunil K. Singh, Henrik Johanson, D. Damjanovic, Zhiguo Sun, A. Sircar, S. Eah, Colin Bombardier, A. daSilva, Brendan O'Brien, A. Roux, B. Cucci, Ordonio Christopher, C. Montgomery, Vandana Venkatasubramanian, Vijaya Rana, J. Mody, J. Shepard, C. Child, B. Morganfeld, Rebekah Sheraw

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引用次数: 0

摘要

随着技术规模的不断扩大，牺牲硬面具材料的选择变得非常关键。牺牲硬掩膜是薄膜，用于图案化或保护关键底层薄膜在蚀刻，沉积或平面化等各种过程中免受损坏。在本文中，我们讨论了牺牲硬掩膜材料对自对准通孔(SAV)图图化过程中的侵蚀，蚀刻过程中的选择性，附着力，缺陷和金属化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Sacrificial Hard Mask Material in BEOL Integration in Advanced Technology

As technology scaling continues, the selection of materials for sacrificial hard masks become very critical. Sacrificial hard masks are thin films that are used for patterning or protecting critical underlying films from damage during various processes like etching, deposition or planarization. In this article, we discuss the effect of the sacrificial hard mask material on the erosion in the self-aligned via (SAV) patterning process, selectivity in the etch process, adhesion, defectivity, and metallization.

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2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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