Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process Technology

In this paper, single event burnout (SEB) effect is investigated for 18V Lateral-diffused MOS (LDMOS) based on 0.18µm process technology. The SEB mechanism is revealed that parasitic bipolar turn-on and the self-maintaining induced by avalanche ionization. At early stage, heavy ion induced ionized holes inject into the P-body (PB) region, giving rise to the parasitic bipolar turn-on. Electrons from the source are allowed to flow to the drain, and exert modulation on electric field profile. Due to field peak formed at drain side, avalanche ionization induced holes provide a supplement for base current of the parasitic bipolar. A positive feedback of holes between the parasitic bipolar and avalanche is responsible for the SEB effect. Multi-implantation radiation hardening technology is proposed to reduce PB region resistance and suppress parasitic bipolar opened, while eliminate the impact on threshold voltage.