用于片上缓存存储器的非刷新动态RAM

D.D. Lee, R. Katz
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引用次数: 3

摘要

结果表明,通过使用简单的电路技术和对缓存组织进行少量修改,可以有效地消除DRAM的刷新需求。采用了选择性无效方案。选择性失效可以用一个小的(每个子块6个晶体管)电路来实现。比较了具有选择性失效的DRAM高速缓存和等效SRAM高速缓存的性能。即使对于使用选择性失效的大型缓存,性能上的差异也非常小。用高密度的DRAM取代SRAM缓存,可以大大提高面积效率和整体处理器性能。大型缓存中的缺失率差异表明,在间隔大于刷新周期的时间间隔内,有一些缓存项处于活动状态。这可能取决于程序或数据的引用行为
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Non-refreshing dynamic RAM for on-chip cache memories
It is shown that, by using simple circuit techniques and a few modifications to cache organization, one can effectively eliminate the refreshing requirement of a DRAM. A selective invalidation scheme is employed. Selective invalidation can be implemented with a small (six transistors per subblock) circuit. The performances of the DRAM cache with selective invalidation and an equivalent SRAM cache are compared. The difference in performance is quite small even for large caches using selective invalidation. By replacing the SRAM cache with higher-density DRAM, the area efficiency and overall processor performance can be greatly improved. The miss ratio difference in large caches indicates that there are some cache entries active at intervals greater than the refresh period. This may depend on the referencing behavior of program or data
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