在III-V nMOSFET技术中，短通道效应的来源增加

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Pub Date : 2012-03-06 DOI:10.1109/ULIS.2012.6193348

T. Dutta, Q. Rafhay, R. Clerc, J. Lacord, S. Monfray, G. Pananakakis, F. Boeuf, G. Ghibaudo

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引用次数: 8

摘要

本文研究了III-V型mosfet中短通道效应增加的不同机制。正如预期的那样，这种增加的第一个原因是由于III-V半导体的介电常数较高。二是由于它们的态密度小，这导致了更大的DIBL，但仅在强反转区，由于更大的暗空间。最后，在量子阱场效应管结构中使用的势垒层被证明会导致额外的DIBL增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Origins of the short channel effects increase in III-V nMOSFET technologies

This paper investigates the different mechanisms responsible for the increase of short channel effects in III-V MOSFETs. As expected, the first origin of this increase is due to the higher dielectric constant of III-V semiconductors. The second is due to their small density of states, which induces larger DIBL, but only in the strong inversion regime, due to larger dark space. Finally, barrier layers, used in the Quantum Well FET architecture, are shown to cause additional DIBL increase.

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

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