高纵横比沟的AFM表面粗糙度和深度测量

F. Heider, Helfried Schwarzfurtner, Mario Lugger, Sang-Joon Cho, T. Trenkler
{"title":"高纵横比沟的AFM表面粗糙度和深度测量","authors":"F. Heider, Helfried Schwarzfurtner, Mario Lugger, Sang-Joon Cho, T. Trenkler","doi":"10.1109/ASMC.2019.8791811","DOIUrl":null,"url":null,"abstract":"Roughness measurements on epitaxial layers before and after etching were done with an atomic force microscope (AFM) with sub-Angstrom repeatability. Furthermore, surface roughness was monitored with AFM after chemical mechanical polishing, before a wafer was bonded to another wafer. It was observed that measuring in non-contact mode reduces the tip wear and extends the life time of AFM tips. We also show that a resist recess in narrow trenches which cannot be measured with scatterometry is easily measured with a high-aspect-ratio tip on AFM. The offset between the AFMs in two different fabs is currently less than 5 nm, when a trench depth recipe is transferred from one tool to another.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"16 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"AFM Surface Roughness and Depth Measurement of Trenches with High Aspect Ratio\",\"authors\":\"F. Heider, Helfried Schwarzfurtner, Mario Lugger, Sang-Joon Cho, T. Trenkler\",\"doi\":\"10.1109/ASMC.2019.8791811\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Roughness measurements on epitaxial layers before and after etching were done with an atomic force microscope (AFM) with sub-Angstrom repeatability. Furthermore, surface roughness was monitored with AFM after chemical mechanical polishing, before a wafer was bonded to another wafer. It was observed that measuring in non-contact mode reduces the tip wear and extends the life time of AFM tips. We also show that a resist recess in narrow trenches which cannot be measured with scatterometry is easily measured with a high-aspect-ratio tip on AFM. The offset between the AFMs in two different fabs is currently less than 5 nm, when a trench depth recipe is transferred from one tool to another.\",\"PeriodicalId\":287541,\"journal\":{\"name\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"16 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2019.8791811\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791811","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用亚埃重复性原子力显微镜(AFM)对外延层蚀刻前后的粗糙度进行了测量。此外,在化学机械抛光后,在晶圆与另一个晶圆粘合之前,用原子力显微镜监测表面粗糙度。结果表明,采用非接触方式测量可减少针尖磨损,延长AFM针尖的使用寿命。我们还表明,在狭窄的沟槽中,用散射法无法测量的抗蚀凹槽可以用AFM上的高纵横比尖端容易测量。当沟槽深度配方从一个工具转移到另一个工具时,两个不同晶圆厂的原子力显微镜之间的偏移量目前小于5纳米。
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AFM Surface Roughness and Depth Measurement of Trenches with High Aspect Ratio
Roughness measurements on epitaxial layers before and after etching were done with an atomic force microscope (AFM) with sub-Angstrom repeatability. Furthermore, surface roughness was monitored with AFM after chemical mechanical polishing, before a wafer was bonded to another wafer. It was observed that measuring in non-contact mode reduces the tip wear and extends the life time of AFM tips. We also show that a resist recess in narrow trenches which cannot be measured with scatterometry is easily measured with a high-aspect-ratio tip on AFM. The offset between the AFMs in two different fabs is currently less than 5 nm, when a trench depth recipe is transferred from one tool to another.
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