InP HBT技术开发中的普适建模

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062467

J. Li, T. Hussain, D. Hitko, M. Sokolich

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引用次数: 2

摘要

随着InP HBT技术迅速扩展到深亚微米范围以及新的异质集成技术的兴起，从器件概念到器件开发再到集成电路生产的InP HBT建模能力显著提高。这项工作强调了InP hbt的关键建模挑战，并强调了建模在技术开发周期中所起的关键作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Pervasive Modeling in InP HBT Technology Development

With InP HBT technologies rapidly scaling into the deep submicron regime and the rise of new heterogeneously integrated technologies, the ability to model InP HBTs from device concept to device development and on through to IC production has grown significantly. This work highlights the key modeling challenges for InP HBTs and highlights the critical role modeling plays in the technology development cycle.

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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