可重构0.5V至1.2V, 10MS/s至100MS/s,低功耗10b 0.13um CMOS流水线ADC

Young-Ju Kim, Hee-Cheol Choi, Si-Wook Yoo, Seunghoon Lee, D. Chung, Kyoung-Ho Moon, Hojin Park, Jae-Whui Kim
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引用次数: 16

摘要

本工作描述了一个可重新配置的0.5 V至1.2 V, 10 MS/s至100 MS/s, 10 b两步流水线ADC。基于0.13 um CMOS工艺的原型ADC显示,测得的DNL和INL分别在0.35 LSB和0.49 LSB范围内。该ADC的有效模面积为0.98 mm2,在0.8 V和60 MS/s的标称条件下,最大SNDR和SFDR分别为56.0 dB和69.6 dB,功耗为19.2 mW。
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A Re-configurable 0.5V to 1.2V, 10MS/s to 100MS/s, Low-Power 10b 0.13um CMOS Pipeline ADC
This work describes a re-configurable 0.5 V to 1.2 V, 10 MS/s to 100 MS/s, 10 b two-step pipeline ADC. The prototype ADC in a 0.13 um CMOS process demonstrates the measured DNL and INL within 0.35 LSB and 0.49 LSB, respectively. The ADC with an active die area of 0.98 mm2 shows the maximum SNDR and SFDR of 56.0 dB and 69.6 dB, respectively, and a power consumption of 19.2 mW at a nominal condition of 0.8 V and 60 MS/s.
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