Jin He, Yan Song, Feng Liu, Feilong Liu, Lining Zhang, Jian Zhang, Xing Zhang
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A complete surface potential-based current-voltage and capacitance-voltage core model for undoped surrounding-gate MOSFETs
A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and predicted SRG-MOSFET¿s characteristics by the 3-D numerical simulation.
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