{"title":"掺铁与未掺铁半绝缘InP高温退火后缺陷的比较研究","authors":"K. Cherkaoui, S. Kallel, G. Marrakchi, A. Karoui","doi":"10.1109/SIM.1996.570878","DOIUrl":null,"url":null,"abstract":"Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The Fe/sub In/ trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing\",\"authors\":\"K. Cherkaoui, S. Kallel, G. Marrakchi, A. Karoui\",\"doi\":\"10.1109/SIM.1996.570878\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The Fe/sub In/ trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570878\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570878","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing
Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The Fe/sub In/ trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material.
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