Si-Ge-Sn体系中的新型红外半导体

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416651

J. Kouvetakis, J. Tolle, J. Menéndez

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摘要

我们将讨论新型Ge/sub - 1-z/Sn/sub -z/ /Ge/sub - 1-x-y/Si/sub x/Sn/sub y异质结构在Si(100)上的CVD生长、表征和性质。Ge/sub 1-x-y/Si/sub x/Sn/sub y/系统提供了独立的应变和带隙工程，以实现可能导致新型光子群iv器件的结构。

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New IR semiconductors in the Si-Ge-Sn system

We will discuss CVD growth, characterization and properties of novel Ge/sub 1-z/Sn/sub z//Ge/sub 1-x-y/Si/sub x/Sn/sub y/ heterostructures on Si(100). The Ge/sub 1-x-y/Si/sub x/Sn/sub y/ system provides independent strain and bandgap engineering to achieve structures that may lead to novel photonic group-IV devices.

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First IEEE International Conference on Group IV Photonics, 2004.

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