R. Ma, Li Wang, Chen Zhang, Fei Lu, Z. Dong, Albert Z. H. Wang, Wei Lu, Yonghua Song, B. Zhao
{"title":"功率ic的TLP和HBM ESD测试相关性","authors":"R. Ma, Li Wang, Chen Zhang, Fei Lu, Z. Dong, Albert Z. H. Wang, Wei Lu, Yonghua Song, B. Zhao","doi":"10.1109/EDSSC.2013.6628149","DOIUrl":null,"url":null,"abstract":"This paper discusses a practical technique to accurately correlate package level ESD protection results by HBM (human body model) zapping and TLP (transmission line pulsing) testing. It is found that the ESD pulse duration plays a key role in correlating HBM and TLP testing results as verified by evaluating 40V-5V DC-DC convertor ICs.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"TLP and HBM ESD test correlation for power ICs\",\"authors\":\"R. Ma, Li Wang, Chen Zhang, Fei Lu, Z. Dong, Albert Z. H. Wang, Wei Lu, Yonghua Song, B. Zhao\",\"doi\":\"10.1109/EDSSC.2013.6628149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses a practical technique to accurately correlate package level ESD protection results by HBM (human body model) zapping and TLP (transmission line pulsing) testing. It is found that the ESD pulse duration plays a key role in correlating HBM and TLP testing results as verified by evaluating 40V-5V DC-DC convertor ICs.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628149\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper discusses a practical technique to accurately correlate package level ESD protection results by HBM (human body model) zapping and TLP (transmission line pulsing) testing. It is found that the ESD pulse duration plays a key role in correlating HBM and TLP testing results as verified by evaluating 40V-5V DC-DC convertor ICs.