M. Miyashita, K. Maemura, K. Yamamoto, T. Shimura, M. Nogami, K. Motoshima, T. Kitayama, Y. Mitsui
{"title":"一种用于10gb /s光通信系统的超宽带GaAs MESFET前置放大器IC","authors":"M. Miyashita, K. Maemura, K. Yamamoto, T. Shimura, M. Nogami, K. Motoshima, T. Kitayama, Y. Mitsui","doi":"10.1109/MCS.1992.186016","DOIUrl":null,"url":null,"abstract":"An ultrabroadband GaAs MESFET preamplifier IC was developed for a 10-Gb/s optical communication system. A high transimpedance of 44 dB- Omega has been obtained from DC to 12 GHz. A receiver has also been fabricated by using this preamplifier IC and a photodiode. The receiver operated with an extremely low equivalent input noise current of 12.6 pA/ square root Hz from DC to 7.8 GHz. The circuit design and the high-frequency characteristics of the preamplifier IC and the receiver are described.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system\",\"authors\":\"M. Miyashita, K. Maemura, K. Yamamoto, T. Shimura, M. Nogami, K. Motoshima, T. Kitayama, Y. Mitsui\",\"doi\":\"10.1109/MCS.1992.186016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultrabroadband GaAs MESFET preamplifier IC was developed for a 10-Gb/s optical communication system. A high transimpedance of 44 dB- Omega has been obtained from DC to 12 GHz. A receiver has also been fabricated by using this preamplifier IC and a photodiode. The receiver operated with an extremely low equivalent input noise current of 12.6 pA/ square root Hz from DC to 7.8 GHz. The circuit design and the high-frequency characteristics of the preamplifier IC and the receiver are described.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.186016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system
An ultrabroadband GaAs MESFET preamplifier IC was developed for a 10-Gb/s optical communication system. A high transimpedance of 44 dB- Omega has been obtained from DC to 12 GHz. A receiver has also been fabricated by using this preamplifier IC and a photodiode. The receiver operated with an extremely low equivalent input noise current of 12.6 pA/ square root Hz from DC to 7.8 GHz. The circuit design and the high-frequency characteristics of the preamplifier IC and the receiver are described.<>