利用Id(Vg)特性和随机电报噪声幅度提取纳米线mosfet的沟道迁移率

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI:10.1109/ULIS.2011.5757991

A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge

{"title":"利用Id(Vg)特性和随机电报噪声幅度提取纳米线mosfet的沟道迁移率","authors":"A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge","doi":"10.1109/ULIS.2011.5757991","DOIUrl":null,"url":null,"abstract":"Combined measurements of random telegraph noise of drain current and drain current — gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude\",\"authors\":\"A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge\",\"doi\":\"10.1109/ULIS.2011.5757991\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Combined measurements of random telegraph noise of drain current and drain current — gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.\",\"PeriodicalId\":146779,\"journal\":{\"name\":\"Ulis 2011 Ultimate Integration on Silicon\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ulis 2011 Ultimate Integration on Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2011.5757991\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ulis 2011 Ultimate Integration on Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2011.5757991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

结合漏极电流和漏极电流的随机电讯噪声和栅极电压特性，计算了纳米线反转模式和积累模式mosfet表面沟道的场效应载流子迁移率，并考虑了寄生源漏电阻。

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Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude

Combined measurements of random telegraph noise of drain current and drain current — gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.

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Ulis 2011 Ultimate Integration on Silicon

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