用于欧洲核子研究中心LHCb RICH探测器升级的快速抗辐射单光子计数专用集成电路

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115435

M. Andreotti, Wander Baldini, M. Baszczyk, R. Calabrese, A. Candelori, P. Carniti, L. Cassina, A. C. Ramusino, P. Dorosz, M. Fiorini, Andrea Giachero, C. Gotti, W. Kucewicz, E. Luppi, M. Maino, R. Malaguti, S. Mattiazzo, L. Minzoni, I. Neri, L. Pappalardo, G. Pessina, L. Silvestrin, L. Tomassetti

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引用次数: 2

摘要

新版本的CLARO8 ASIC采用AMS 0.35 μm CMOS技术，基于设计单元的辐射硬化，并经过广泛测试。给出了完整辐射硬度表征的结果。

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A fast and radiation-hard single-photon counting ASIC for the upgrade of the LHCb RICH detector at CERN

A new version of the CLARO8 ASIC has been designed in AMS 0.35 μm CMOS technology, based on radiation hardened by design cells, and extensively tested. Results on the complete radiation hardness characterization are presented.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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