{"title":"48 V-12 V隔离型DC/DC变换器小型化,采用GaN晶体管,工作在2 mhz开关频率","authors":"K. Sakamoto, Atsushi Yamaguchi, K. Nakahara","doi":"10.1109/WiPDAAsia49671.2020.9360289","DOIUrl":null,"url":null,"abstract":"The compatibility of high switching-frequency $(f_{sw})$ and high efficiency is achieved using GaN transistors in 48 V-12 V isolation-type DC/DC converter. High fsw increases power loss, but generate a downward trend for the required magnetic flux per switch. Hence, an optimal fsw is found for gaining the compatibility. The prior-to-experiment loss estimation proves that $f_{sw}\\sim 2$ MHz is optimal, and a converter with the size of 25.0 mm $\\times$16.8 mm $\\times$ 4.5 mm is made assuming that GaN-FETs are employed. With an air-cooled condition of 2m/s, this converter can transfer 129 W output power and its maximum power conversion efficiency reach to 95.3%.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"48 V-12 V Isolated-type DC/DC converter miniaturized using GaN transistors and operating at 2-MHz switching frequency Koki Sakamoto Atsushi Yamaguchi Ken Nakahara\",\"authors\":\"K. Sakamoto, Atsushi Yamaguchi, K. Nakahara\",\"doi\":\"10.1109/WiPDAAsia49671.2020.9360289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The compatibility of high switching-frequency $(f_{sw})$ and high efficiency is achieved using GaN transistors in 48 V-12 V isolation-type DC/DC converter. High fsw increases power loss, but generate a downward trend for the required magnetic flux per switch. Hence, an optimal fsw is found for gaining the compatibility. The prior-to-experiment loss estimation proves that $f_{sw}\\\\sim 2$ MHz is optimal, and a converter with the size of 25.0 mm $\\\\times$16.8 mm $\\\\times$ 4.5 mm is made assuming that GaN-FETs are employed. With an air-cooled condition of 2m/s, this converter can transfer 129 W output power and its maximum power conversion efficiency reach to 95.3%.\",\"PeriodicalId\":432666,\"journal\":{\"name\":\"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WiPDAAsia49671.2020.9360289\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在48v - 12v隔离型DC/DC变换器中采用GaN晶体管,实现了高开关频率和高效率的兼容。高fsw增加了功率损耗,但产生了每开关所需磁通的下降趋势。因此,找到了获得兼容性的最佳fsw。实验前损耗估计证明了$f_{sw}\sim 2$ MHz是最优的,并且假设使用gan - fet,得到了一个尺寸为25.0 mm $ $ × 16.8 mm $ $ × 4.5 mm的变换器。在2m/s的风冷工况下,该变流器输出功率可达129 W,最大功率转换效率可达95.3%。
48 V-12 V Isolated-type DC/DC converter miniaturized using GaN transistors and operating at 2-MHz switching frequency Koki Sakamoto Atsushi Yamaguchi Ken Nakahara
The compatibility of high switching-frequency $(f_{sw})$ and high efficiency is achieved using GaN transistors in 48 V-12 V isolation-type DC/DC converter. High fsw increases power loss, but generate a downward trend for the required magnetic flux per switch. Hence, an optimal fsw is found for gaining the compatibility. The prior-to-experiment loss estimation proves that $f_{sw}\sim 2$ MHz is optimal, and a converter with the size of 25.0 mm $\times$16.8 mm $\times$ 4.5 mm is made assuming that GaN-FETs are employed. With an air-cooled condition of 2m/s, this converter can transfer 129 W output power and its maximum power conversion efficiency reach to 95.3%.