骁龙820 SEE测试结果

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115452

S. Guertin, M. Cui

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引用次数: 7

摘要

给出了高通骁龙820及其支持的DDR4器件(本例中为SK海力士24 Gb LP DDR4器件H9HKNNNDGUMUBR-NMH)的质子、中子和重离子测试结果。处理器崩溃和DDR4卡位是质子和中子的主要SEE类型。测试准备困难和软件限制导致测试工作仅限于处理器崩溃，sefi和SBU，以及DDR4设备中的卡位。由于仪器之间的误差混合在一起，结果的解释变得复杂。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEE test results for the Snapdragon 820

SEE test results are presented for proton, neutron, and heavy ion testing of the Qualcomm Snapdragon 820 and its support DDR4 device (in this case the SK Hynix 24 Gb LP DDR4 device H9HKNNNDGUMUBR-NMH). Processor crashes and DDR4 stuck bits are the primary SEE types for protons and neutrons. Test preparation difficulties and software limitations caused test efforts to be limited to processor crashes, SEFIs and SBU, and Stuck Bits in the DDR4 device. Interpretation of results is complicated by mixing of errors between devices.

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来源期刊

2017 IEEE Radiation Effects Data Workshop (REDW)

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