{"title":"利用钛作为抗反射涂层的激光平面化铝用于超大规模集成电路金属化","authors":"Y. Lai, R. Liu, K. Cheung, R. Heim","doi":"10.1109/VMIC.1989.78064","DOIUrl":null,"url":null,"abstract":"Summary form only given. A report is presented on Ti as an antireflective coating (ARC) to solve the problems encountered using excimer lasers to melt and planarize an Al film. The composite metal film consists of 100-AA Ti on 0.5-1- mu m Al on 1000-AA Ti:W, where Ti is the ARC and Ti:W serves as both a wetting layer and a diffusion barrier. The absorptivity at 308 nm of this composite film has been measured as 0.4, which is about five times higher than that of Al. The introduction Ti ARC widens the process window (via-fill to ablation) from +or-6-8 to more than +or-20%. ARC does not improve the via-fill limit: the temperature of sufficient Al flow to fill contact windows is not lowered. Rather, the wider process window is achieved by pushing the ablation limit towards a higher laser fluence range. It is concluded that 100-AA Ti is not a desirable ARC. However, the value of an ARC in widening the process window is very important to laser planarization and has been demonstrated.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The use of Ti as an antireflective coating for the laser planarization of Al for VLSI metallization\",\"authors\":\"Y. Lai, R. Liu, K. Cheung, R. Heim\",\"doi\":\"10.1109/VMIC.1989.78064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. A report is presented on Ti as an antireflective coating (ARC) to solve the problems encountered using excimer lasers to melt and planarize an Al film. The composite metal film consists of 100-AA Ti on 0.5-1- mu m Al on 1000-AA Ti:W, where Ti is the ARC and Ti:W serves as both a wetting layer and a diffusion barrier. The absorptivity at 308 nm of this composite film has been measured as 0.4, which is about five times higher than that of Al. The introduction Ti ARC widens the process window (via-fill to ablation) from +or-6-8 to more than +or-20%. ARC does not improve the via-fill limit: the temperature of sufficient Al flow to fill contact windows is not lowered. Rather, the wider process window is achieved by pushing the ablation limit towards a higher laser fluence range. It is concluded that 100-AA Ti is not a desirable ARC. However, the value of an ARC in widening the process window is very important to laser planarization and has been demonstrated.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
只提供摘要形式。本文报道了Ti作为一种抗反射涂层(ARC)来解决准分子激光熔化和平化铝膜时遇到的问题。复合金属膜由100-AA Ti和0.5-1- μ m Al和1000-AA Ti:W组成，其中Ti为ARC, Ti:W既是润湿层又是扩散屏障。该复合膜在308 nm处的吸光率为0.4，约为Al的5倍。Ti电弧的引入将工艺窗口(通过填充到烧蚀)从+or-6-8扩大到+or-20%以上。电弧并不能提高通过填充的限制:足够的铝流填充接触窗口的温度没有降低。相反，更宽的工艺窗口是通过将烧蚀极限推向更高的激光通量范围来实现的。结果表明，100-AA Ti不是理想的电弧。然而，电弧在扩大工艺窗口方面的价值对激光平面化非常重要，并已得到证实。
The use of Ti as an antireflective coating for the laser planarization of Al for VLSI metallization
Summary form only given. A report is presented on Ti as an antireflective coating (ARC) to solve the problems encountered using excimer lasers to melt and planarize an Al film. The composite metal film consists of 100-AA Ti on 0.5-1- mu m Al on 1000-AA Ti:W, where Ti is the ARC and Ti:W serves as both a wetting layer and a diffusion barrier. The absorptivity at 308 nm of this composite film has been measured as 0.4, which is about five times higher than that of Al. The introduction Ti ARC widens the process window (via-fill to ablation) from +or-6-8 to more than +or-20%. ARC does not improve the via-fill limit: the temperature of sufficient Al flow to fill contact windows is not lowered. Rather, the wider process window is achieved by pushing the ablation limit towards a higher laser fluence range. It is concluded that 100-AA Ti is not a desirable ARC. However, the value of an ARC in widening the process window is very important to laser planarization and has been demonstrated.<>
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