新的和精确的填充算法布局密度控制

A. Kahng, G. Robins, Anish Singh, A. Zelikovsky
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引用次数: 26

摘要

为了减少由于化学-机械抛光而导致的制造变化,并提高成品率,必须根据密度标准进行均匀的布局。这是通过布局后处理来添加填充几何来实现的,无论是在铸造厂还是为了更好地收敛性能验证流,在布局合成期间。本文提出了一种新的填充几何合成的最小变化目标。在所谓的固定解剖制度下(密度界限被强加在布局中预定的一组窗口上),我们使用线性规划公式精确地解决了最小变化目标。我们还陈述了填充模式合成的标准,并讨论了填充时必须接地的附加标准,以实现电路性能的可预测性。我们相信CMP的密度控制将成为未来几年VLSI设计制造界面的重要研究课题。
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New and exact filling algorithms for layout density control
To reduce manufacturing variation due to chemical-mechanical polishing and to improve yield, layout must be made uniform with respect to density criteria. This is achieved by layout postprocessing to add fill geometries, either at the foundry or, for better convergence of performance verification flows, during layout synthesis. This paper proposes a new min-variation objective for the synthesis of fill geometries. Within the so-called fixed dissection regime (where density bounds are imposed on a predetermined set of windows in the layout), we exactly solve the min-variation objective using a linear programming formulation. We also state criteria for fill pattern synthesis, and discuss additional criteria that apply when fill, must be grounded for predictability of circuit performance. We believe that density control for CMP will become an important research topic in the VLSI design-manufacturing interface over the next several years.
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