基于电容反馈的精确电流注入的3.9-4.5GHz c类压控振荡器

Arpan Thakkar, Srinivas Theertham, P. Mirajkar, Jagdish Chand Goyal, S. Aniruddhan
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引用次数: 4

摘要

提出了一种双负反馈结构的c类压控振荡器,打破了振荡幅度稳定性与偏置电流闪变噪声之间的权衡关系。这种结构固有的动态偏置使可用电压摆幅最大化,并提供强大的电流控制,而无需任何额外的电路。为了精确地在振荡峰值处注入电流,提出了一种电容反馈技术,通过补偿交叉耦合对寄生造成的注入电流延迟进一步改善相位噪声性能。该VCO采用基于BJT的交叉耦合对实现在130nm BiCMOS技术上。当工作在3.9GHz时,其相位噪声性能为- 131dBc/Hz @ 1MHz偏移。它具有14%的调谐范围,并呈现出184dBc/Hz的FoM。
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A 3.9–4.5GHz class-C VCO with accurate current injection based on capacitive feedback
A class-C VCO with dual negative feedback architecture is proposed to break the trade-off between amplitude stability of oscillation and bias current flicker noise. Inherent dynamic biasing of this architecture maximizes available voltage swing and provides robust current control without any additional circuits. To inject current exactly at the peak of oscillation, a capacitive feedback technique is proposed which improves phase noise performance further by compensating current injection delay caused due to cross-coupled pair parasitics. This VCO has been implemented in 130nm BiCMOS technology using BJT based cross-coupled pair. It exhibits phase noise performance of −131dBc/Hz @ 1MHz offset when running at 3.9GHz. It exhibits a 14% tuning range, and presents an FoM of 184dBc/Hz.
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