用于常关GaN hemt的新型纳米结构P-GaN栅极的设计优化

2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) Pub Date : 2022-06-23 DOI:10.23919/mixdes55591.2022.9838389

Daniel Rouly, J. Tasselli, P. Austin, Chaymaa Haloui, K. Isoird, F. Morancho

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引用次数: 0

摘要

提出了一种新的AlGaN/GaN异质结构，以实现GaN hemt的正常关闭行为。它依赖于沿栅的多个P-GaN阱外延再生。重点介绍了P-GaN井的物理和几何参数的模拟结果。证明了新型HEMT的正常关闭行为。

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Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs

A new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate. Simulation results are presented by focusing on the physical and geometrical parameters of the P-GaN wells. The normally-off behavior of the novel HEMT is demonstrated.

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2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)

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