基于硅通孔的碳纳米管分析

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) Pub Date : 2010-06-01 DOI:10.1109/ECTC.2010.5490885

S. Kannan, Anurag Gupta, Bruce C. Kim, F. Mohammed, Byoungchul Ahn

{"title":"基于硅通孔的碳纳米管分析","authors":"S. Kannan, Anurag Gupta, Bruce C. Kim, F. Mohammed, Byoungchul Ahn","doi":"10.1109/ECTC.2010.5490885","DOIUrl":null,"url":null,"abstract":"In this paper we have provided analysis of carbon nanotube (CNT) based Through Silicon Vias (TSVs) for package interconnects. The package interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSV with copper and carbon nanotubes. The results from the CNT-based TSVs were greatly superior to conventional vias with copper.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"Analysis of carbon nanotube based Through Silicon Vias\",\"authors\":\"S. Kannan, Anurag Gupta, Bruce C. Kim, F. Mohammed, Byoungchul Ahn\",\"doi\":\"10.1109/ECTC.2010.5490885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we have provided analysis of carbon nanotube (CNT) based Through Silicon Vias (TSVs) for package interconnects. The package interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSV with copper and carbon nanotubes. The results from the CNT-based TSVs were greatly superior to conventional vias with copper.\",\"PeriodicalId\":429629,\"journal\":{\"name\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2010.5490885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2010.5490885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 26

摘要

本文对基于碳纳米管(CNT)的硅通孔(tsv)封装互连进行了分析。封装互连是实现高性能和可靠性的基本瓶颈。我们用铜纳米管和碳纳米管对TSV进行了电建模和模拟。基于碳纳米管的tsv的结果大大优于传统的铜通孔。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Analysis of carbon nanotube based Through Silicon Vias

In this paper we have provided analysis of carbon nanotube (CNT) based Through Silicon Vias (TSVs) for package interconnects. The package interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSV with copper and carbon nanotubes. The results from the CNT-based TSVs were greatly superior to conventional vias with copper.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

自引率

0.00%

发文量