单种植体与多种植体处理对SIMOX缺陷类型和密度的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344598

D. Venables, S. J. Krause, J.C. Park, J.D. Lee, P. Roitman

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引用次数: 1

摘要

本文描述了当代SIMOX中缺陷结构的起源和特征，并说明了它们的密度如何受到加工方法和条件的控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of single vs. multiple implant processing on defect types and densities in SIMOX

In this paper we describe the origin and characteristics of the defect structures in contemporary SIMOX and show how their densities are controlled by the processing method and conditions.<>

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Proceedings of 1993 IEEE International SOI Conference

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