基于1T1R AlOx/ wox的RRAM阵列的阻性开关可变性研究

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628071

Bin Jiao, Ning Deng, Jie Yu, Yue Bai, Minghao Wu, Ye Zhang, H. Qian, Huaqiang Wu

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引用次数: 5

摘要

由于开关过程的随机性，电阻式随机存取存储器(RRAM)通常表现出较大的变化。研究了基于双层AlOx/WOx的RRAM细胞的关键参数变化。这些AlOx/WOx存储器件是在商用CMOS代工厂制造的。研究了在不同晶体管尺寸和成型电压条件下的成品率。讨论了阵列大小、速度和功耗之间的权衡。

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Resisitive switching variability study on 1T1R AlOx/WOx-based RRAM array

Resistive random access memories (RRAM) often show large variation due to the stochastic nature of the switching process. Bilayer AlOx/WOx based RRAM cells were investigated for key parameters variations. Those AlOx/WOx memory devices were fabricated in a commercial CMOS foundry. Yield of forming process is studied with different transistor size and forming voltage. The tradeoff between array size, speed and power consumption are discussed.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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