2mb嵌入式相变存储器，具有16ns读访问时间和5mb /s写吞吐量的90纳米BCD技术，用于汽车应用

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC) Pub Date : 2019-09-01 DOI:10.1109/ESSCIRC.2019.8902656

M. Carissimi, R. Mukherjee, V. Tyagi, F. Disegni, Davide Manfrè, C. Torti, D. Gallinari, S. Rossi, A. Gambero, D. Brambilla, P. Zuliani, R. Zurla, A. Cabrini, G. Torelli, M. Pasotti, C. Auricchio, E. Calvetti, L. Capecchi, L. Croce, Stefano Zanchi, V. Rana, Preeti Mishra

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引用次数: 1

摘要

本文介绍了一种采用90纳米BJT-CMOS-DMOS (BCD)技术设计的2mb嵌入式相变存储器(ePCM)宏电池，能够解决基于富ge硫族合金的ePCM电池的下一代汽车和智能电源产品的问题。优化后的内存在- 40°C到175°C范围内允许16ns的随机访问时间和5mbit /s的写入吞吐量，具有100 kcycle的续航时间。介绍了满足汽车要求的传感器放大器、编程电路和数据处理逻辑。给出了硅的实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications

This letter presents a 2-Mb embedded phase change memory (ePCM) macrocell designed in 90-nm BJT-CMOS-DMOS (BCD) technology able to address the next generation of automotive and smart-power products exploiting an ePCM cell based on a Ge-rich chalcogenide alloy. The optimized memory allows 16-ns random access time and 5-Mbit/s write throughput from −40 °C to 175 °C, with 100 kcycle endurance. The sense amplifier, the programming circuitry, and the data processing logic able to meet automotive requirements are described. The silicon results are provided.

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ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)

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