{"title":"用于纳米离子氧化还原导电桥阻开关存储器的GexS1−x薄膜的PECVD","authors":"M. R. Latif, M. Mitkova, G. Tompa, E. Coleman","doi":"10.1109/WMED.2013.6544504","DOIUrl":null,"url":null,"abstract":"This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.","PeriodicalId":134493,"journal":{"name":"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"PECVD of GexS1−x films for nano-ionic redox conductive bridge memristive switch memory\",\"authors\":\"M. R. Latif, M. Mitkova, G. Tompa, E. Coleman\",\"doi\":\"10.1109/WMED.2013.6544504\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.\",\"PeriodicalId\":134493,\"journal\":{\"name\":\"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2013.6544504\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2013.6544504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PECVD of GexS1−x films for nano-ionic redox conductive bridge memristive switch memory
This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
