半间距14nm直接图案与纳米压印光刻

T. Nakasugi, T. Kono, K. Fukuhara, M. Hatano, H. Tokue, M. Komori, H. Tsuda, T. Komukai, K. Takahata, H. Kato, K. Kobayashi, A. Mitra, S. Kobayashi, S. Inoue, T. Higashiki, T. Motokawa, M. Saito, S. Kanamitsu, M. Itoh, T. Imamura, K. Matasunaga, K. Hashimoto, Y. Kim, J. Cho, W. Jung
{"title":"半间距14nm直接图案与纳米压印光刻","authors":"T. Nakasugi, T. Kono, K. Fukuhara, M. Hatano, H. Tokue, M. Komori, H. Tsuda, T. Komukai, K. Takahata, H. Kato, K. Kobayashi, A. Mitra, S. Kobayashi, S. Inoue, T. Higashiki, T. Motokawa, M. Saito, S. Kanamitsu, M. Itoh, T. Imamura, K. Matasunaga, K. Hashimoto, Y. Kim, J. Cho, W. Jung","doi":"10.1109/IEDM.2018.8614578","DOIUrl":null,"url":null,"abstract":"We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ($3\\sigma$) and the template life around 125 lots. Throughput of 80 wafers per hour (wph) was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon (GP-SOC) and multi field dispense (MFD). The hp 14 nm template was fabricated by a self-aligned double patterning (SADP) on a template. Using this template, we fabricated hp 14 nm dense Si lines with a depth of 50 nm on a 300 mm wafer.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Half pitch 14 nm direct pattering with Nanoimprint lithography\",\"authors\":\"T. Nakasugi, T. Kono, K. Fukuhara, M. Hatano, H. Tokue, M. Komori, H. Tsuda, T. Komukai, K. Takahata, H. Kato, K. Kobayashi, A. Mitra, S. Kobayashi, S. Inoue, T. Higashiki, T. Motokawa, M. Saito, S. Kanamitsu, M. Itoh, T. Imamura, K. Matasunaga, K. Hashimoto, Y. Kim, J. Cho, W. Jung\",\"doi\":\"10.1109/IEDM.2018.8614578\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ($3\\\\sigma$) and the template life around 125 lots. Throughput of 80 wafers per hour (wph) was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon (GP-SOC) and multi field dispense (MFD). The hp 14 nm template was fabricated by a self-aligned double patterning (SADP) on a template. Using this template, we fabricated hp 14 nm dense Si lines with a depth of 50 nm on a 300 mm wafer.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614578\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

摘要

我们开发了一种用于半间距(hp) 14nm直接图案的纳米压印技术(NIL),包括NIL系统、模板和抗蚀剂工艺。最新的NIL系统NZ2C显示混合匹配覆盖层(MMO)为3.4 nm ($3\sigma$),模板寿命约为125批次。通过采用气渗透碳自旋(GP-SOC)和多场分配(MFD)等通量增强解决方案,证明了每小时80片晶圆的吞吐量。采用自对准双图案(SADP)在模板上制备了hp14nm模板。利用该模板,我们在300mm晶圆上制备了深度为50nm的14nm高密度硅线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Half pitch 14 nm direct pattering with Nanoimprint lithography
We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ($3\sigma$) and the template life around 125 lots. Throughput of 80 wafers per hour (wph) was demonstrated using throughput enhancement solutions, such as gas permeable spin-on-carbon (GP-SOC) and multi field dispense (MFD). The hp 14 nm template was fabricated by a self-aligned double patterning (SADP) on a template. Using this template, we fabricated hp 14 nm dense Si lines with a depth of 50 nm on a 300 mm wafer.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A simulation based study of NC-FETs design: off-state versus on-state perspective Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stack A Si FET-type Gas Sensor with Pulse-driven Localized Micro-heater for Low Power Consumption Effects of Basal Plane Dislocations on SiC Power Device Reliability First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1