S. Chandrasekhar, B.C. Johnson, E. Tokumitsu, A. Dentai, C. Joyner, A. Gnauck, J. Perino, G. Qua, C. Burrus
{"title":"用于光接收机的集成InP/InGaAs HBT前置放大器","authors":"S. Chandrasekhar, B.C. Johnson, E. Tokumitsu, A. Dentai, C. Joyner, A. Gnauck, J. Perino, G. Qua, C. Burrus","doi":"10.1109/ICIPRM.1990.203010","DOIUrl":null,"url":null,"abstract":"Heterojunction bipolar transistors (HBTs) in the InP/InGaAs material system have been integrated, for the first time, into a transimpedance preamplifier circuit suitable for long wavelength photoreceivers. The preamplifier was also integrated with an InP/InGaAs p-i-n photodetector to realize a monolithic optical receiver. Both circuits had a bandwidth of 500 MHz and operated at 1 Gb/s with an optical sensitivity of -25.5 dBm for the preamplifier connected to an external photodetector and -26.1 dBm for the monolithic photoreceiver. The results demonstrate that there is no compromise in performance as a result of the monolithic integration.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Integrated InP/InGaAs HBT preamplifier for an optical receiver\",\"authors\":\"S. Chandrasekhar, B.C. Johnson, E. Tokumitsu, A. Dentai, C. Joyner, A. Gnauck, J. Perino, G. Qua, C. Burrus\",\"doi\":\"10.1109/ICIPRM.1990.203010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Heterojunction bipolar transistors (HBTs) in the InP/InGaAs material system have been integrated, for the first time, into a transimpedance preamplifier circuit suitable for long wavelength photoreceivers. The preamplifier was also integrated with an InP/InGaAs p-i-n photodetector to realize a monolithic optical receiver. Both circuits had a bandwidth of 500 MHz and operated at 1 Gb/s with an optical sensitivity of -25.5 dBm for the preamplifier connected to an external photodetector and -26.1 dBm for the monolithic photoreceiver. The results demonstrate that there is no compromise in performance as a result of the monolithic integration.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated InP/InGaAs HBT preamplifier for an optical receiver
Heterojunction bipolar transistors (HBTs) in the InP/InGaAs material system have been integrated, for the first time, into a transimpedance preamplifier circuit suitable for long wavelength photoreceivers. The preamplifier was also integrated with an InP/InGaAs p-i-n photodetector to realize a monolithic optical receiver. Both circuits had a bandwidth of 500 MHz and operated at 1 Gb/s with an optical sensitivity of -25.5 dBm for the preamplifier connected to an external photodetector and -26.1 dBm for the monolithic photoreceiver. The results demonstrate that there is no compromise in performance as a result of the monolithic integration.<>
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