1 mbit商用磁阻随机存取存储器(MRAM)的单事件效应评估

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115456

P. Adell, Slaven Moro, L. Gouyet, C. Chatry, B. Vermeire

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引用次数: 7

摘要

实验评估了1 mbit商用MRAM的单事件效应磁化率。在LET阈值为2.29 MeV的动态模式下，存储器表现出sefi。Cm2 /mg和饱和截面2.2×10−4 Cm2 /装置。记忆对SEL、SEU和MBUs不敏感。

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Single event effect assessment of a 1-Mbit commercial magneto-resistive random access memory (MRAM)

Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm²/mg and a saturated cross section of 2.2×10⁻⁴ cm²/device. The memory was not sensitive to SEL, SEU or MBUs.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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