{"title":"纳米结构硅PN结二极管的硅带隙能量受激发射","authors":"M. Chen, C. Tsai","doi":"10.1109/GROUP4.2004.1416634","DOIUrl":null,"url":null,"abstract":"Stimulated emission at silicon bandgap energy has been observed from a silicon nanostructured PN junction diode with a ridge waveguide structure using current injection at room temperature. The output optical power increases superlinearly and multiple spectral peaks appear at wavelengths longer than the main peak of spontaneous emission as the injection current reaches a threshold. A theoretical analysis on population inversion and optical gain at bandgap energy in indirect bandgap semiconductors suggests the possibility of stimulated emission.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stimulated emission at silicon bandgap energy from a nanostructured silicon PN junction diode\",\"authors\":\"M. Chen, C. Tsai\",\"doi\":\"10.1109/GROUP4.2004.1416634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stimulated emission at silicon bandgap energy has been observed from a silicon nanostructured PN junction diode with a ridge waveguide structure using current injection at room temperature. The output optical power increases superlinearly and multiple spectral peaks appear at wavelengths longer than the main peak of spontaneous emission as the injection current reaches a threshold. A theoretical analysis on population inversion and optical gain at bandgap energy in indirect bandgap semiconductors suggests the possibility of stimulated emission.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Stimulated emission at silicon bandgap energy from a nanostructured silicon PN junction diode
Stimulated emission at silicon bandgap energy has been observed from a silicon nanostructured PN junction diode with a ridge waveguide structure using current injection at room temperature. The output optical power increases superlinearly and multiple spectral peaks appear at wavelengths longer than the main peak of spontaneous emission as the injection current reaches a threshold. A theoretical analysis on population inversion and optical gain at bandgap energy in indirect bandgap semiconductors suggests the possibility of stimulated emission.
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