{"title":"双材料栅极(DMG) SOI MESFET的亚阈值行为分析新模型","authors":"T. Chiang","doi":"10.1109/ICSICT.2008.4734535","DOIUrl":null,"url":null,"abstract":"Based on the exact resultant solution of two dimensional Poisson equation, a new analytical subthreshold behavior model consisting of two dimensional potential, threshold voltage and subthreshold swing for the dual material gate (DMG) SOI MESFETs is developed. The model is verified by the good agreement when compared with the numerical simulation of device simulator MEDICI. The model not only offers the physical insight into device physics but also provides the efficient device model for the circuit simulation.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The new analytical subthreshold behavior model for dual material gate (DMG) SOI MESFET\",\"authors\":\"T. Chiang\",\"doi\":\"10.1109/ICSICT.2008.4734535\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on the exact resultant solution of two dimensional Poisson equation, a new analytical subthreshold behavior model consisting of two dimensional potential, threshold voltage and subthreshold swing for the dual material gate (DMG) SOI MESFETs is developed. The model is verified by the good agreement when compared with the numerical simulation of device simulator MEDICI. The model not only offers the physical insight into device physics but also provides the efficient device model for the circuit simulation.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734535\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734535","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
基于二维泊松方程的精确结果解，建立了双材料栅极(DMG) SOI mesfet的二维电位、阈值电压和阈值摆幅的解析亚阈行为模型。通过与器件模拟器MEDICI的数值仿真比较，验证了模型的一致性。该模型不仅提供了对器件物理特性的物理洞察，而且为电路仿真提供了有效的器件模型。
The new analytical subthreshold behavior model for dual material gate (DMG) SOI MESFET
Based on the exact resultant solution of two dimensional Poisson equation, a new analytical subthreshold behavior model consisting of two dimensional potential, threshold voltage and subthreshold swing for the dual material gate (DMG) SOI MESFETs is developed. The model is verified by the good agreement when compared with the numerical simulation of device simulator MEDICI. The model not only offers the physical insight into device physics but also provides the efficient device model for the circuit simulation.
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