Y. Kawashima, T. Ichikawa, N. Nakamura, B. Kawano, T. Ide, S. Obata, Y. Den, M. Kudo
{"title":"控制FSG/SiO/sub - 2/层间条件，防止F在Ti/SiO/sub - 2/处积聚导致al线分层","authors":"Y. Kawashima, T. Ichikawa, N. Nakamura, B. Kawano, T. Ide, S. Obata, Y. Den, M. Kudo","doi":"10.1109/ISSM.2001.962938","DOIUrl":null,"url":null,"abstract":"The optimum conditions of a fluorinated silica glass/SiO/sub 2/ (FSG/SiO/sub 2/) interlayer were investigated for preventing Al-wiring delamination. TiF/sub x/ formation by F atoms transported from the FSG film to the Ti/SiO/sub 2/ interface during the metallization process induced the delamination. Correlation between the Al-wiring delamination and F concentration at Ti/SiO/sub 2/ was demonstrated by a 3-D mapping of F concentrations at Ti/SiO/sub 2/ with various thickness of SiO/sub 2/ film and F content in the FSG film. Some treatments of the FSG/SiO/sub 2/ interlayer to reduce F accumulation at Ti/SiO/sub 2/ were also examined. It was revealed that more than 4500-/spl Aring/ thickness and strain relaxation of the compressive SiO/sub 2/ film were effective for F reduction at Ti/SiO/sub 2/. On the other hand, F concentration at Ti/SiO/sub 2/ was independent of F content in the FSG film in the range of 2-5 %. F content in FSG film should be kept as much as possible, that is, 4-5 % not to increase the capacitance between adjacent metal lines. The Al-wiring delamination was prevented by introducing these parameters of the FSG/SiO/sub 2/ interlayer into the fabrication line.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Control of FSG/SiO/sub 2/ interlayer conditions to prevent Al-wiring delamination caused by F accumulation at Ti/SiO/sub 2/\",\"authors\":\"Y. Kawashima, T. Ichikawa, N. Nakamura, B. Kawano, T. Ide, S. Obata, Y. Den, M. Kudo\",\"doi\":\"10.1109/ISSM.2001.962938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The optimum conditions of a fluorinated silica glass/SiO/sub 2/ (FSG/SiO/sub 2/) interlayer were investigated for preventing Al-wiring delamination. TiF/sub x/ formation by F atoms transported from the FSG film to the Ti/SiO/sub 2/ interface during the metallization process induced the delamination. Correlation between the Al-wiring delamination and F concentration at Ti/SiO/sub 2/ was demonstrated by a 3-D mapping of F concentrations at Ti/SiO/sub 2/ with various thickness of SiO/sub 2/ film and F content in the FSG film. Some treatments of the FSG/SiO/sub 2/ interlayer to reduce F accumulation at Ti/SiO/sub 2/ were also examined. It was revealed that more than 4500-/spl Aring/ thickness and strain relaxation of the compressive SiO/sub 2/ film were effective for F reduction at Ti/SiO/sub 2/. On the other hand, F concentration at Ti/SiO/sub 2/ was independent of F content in the FSG film in the range of 2-5 %. F content in FSG film should be kept as much as possible, that is, 4-5 % not to increase the capacitance between adjacent metal lines. The Al-wiring delamination was prevented by introducing these parameters of the FSG/SiO/sub 2/ interlayer into the fabrication line.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Control of FSG/SiO/sub 2/ interlayer conditions to prevent Al-wiring delamination caused by F accumulation at Ti/SiO/sub 2/
The optimum conditions of a fluorinated silica glass/SiO/sub 2/ (FSG/SiO/sub 2/) interlayer were investigated for preventing Al-wiring delamination. TiF/sub x/ formation by F atoms transported from the FSG film to the Ti/SiO/sub 2/ interface during the metallization process induced the delamination. Correlation between the Al-wiring delamination and F concentration at Ti/SiO/sub 2/ was demonstrated by a 3-D mapping of F concentrations at Ti/SiO/sub 2/ with various thickness of SiO/sub 2/ film and F content in the FSG film. Some treatments of the FSG/SiO/sub 2/ interlayer to reduce F accumulation at Ti/SiO/sub 2/ were also examined. It was revealed that more than 4500-/spl Aring/ thickness and strain relaxation of the compressive SiO/sub 2/ film were effective for F reduction at Ti/SiO/sub 2/. On the other hand, F concentration at Ti/SiO/sub 2/ was independent of F content in the FSG film in the range of 2-5 %. F content in FSG film should be kept as much as possible, that is, 4-5 % not to increase the capacitance between adjacent metal lines. The Al-wiring delamination was prevented by introducing these parameters of the FSG/SiO/sub 2/ interlayer into the fabrication line.
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