F. Starzer, A. Fischer, H. Knapp, R. Lachner, M. Wojnowski, L. Maurer, A. Stelzer
{"title":"eWLB封装中的低相位噪声压控振荡器","authors":"F. Starzer, A. Fischer, H. Knapp, R. Lachner, M. Wojnowski, L. Maurer, A. Stelzer","doi":"10.1109/EPTC.2012.6507101","DOIUrl":null,"url":null,"abstract":"A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A low phase noise VCO in eWLB package\",\"authors\":\"F. Starzer, A. Fischer, H. Knapp, R. Lachner, M. Wojnowski, L. Maurer, A. Stelzer\",\"doi\":\"10.1109/EPTC.2012.6507101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.\",\"PeriodicalId\":431312,\"journal\":{\"name\":\"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2012.6507101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2012.6507101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A chip-package co-design for a voltage controlled oscillator (VCO) designed in a 200-GHz SiGe:C technology is presented. The VCO is frequency-adjustable using a package defined inductor. An overall bandwidth of 21% supports the frequency bands for three different radar applications with a single silicon device. The VCO is accompanied by a buffer, a down-converter mixer (D-Cm) as well as a prescaler. The VCO is assembled in an embedded wafer level ball grid array (eWLB) package with its inductor in the packages fan-in area. It obtains a center frequency as high as 18GHz and achieves phase noise (PN) values of −92 dBc/Hz at 100 kHz offset frequency and an overall bandwidth of 21.7%.
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