{"title":"低功耗垂直GaN SGT-MOSFET的优化","authors":"N. Jaiswal, V. N. Ramakrishnan, Sukhendu deb Roy","doi":"10.1109/WiPDAAsia49671.2020.9360257","DOIUrl":null,"url":null,"abstract":"We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimization of Vertical GaN SGT-MOSFET for Low Ron\",\"authors\":\"N. Jaiswal, V. N. Ramakrishnan, Sukhendu deb Roy\",\"doi\":\"10.1109/WiPDAAsia49671.2020.9360257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.\",\"PeriodicalId\":432666,\"journal\":{\"name\":\"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WiPDAAsia49671.2020.9360257\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of Vertical GaN SGT-MOSFET for Low Ron
We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.
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