绝缘栅集成iii -氮化物射频开关

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062470

R. Gaska, J. Yang, D. Billingsley, B. Khan, G. Simin, H. Y. Wong, N. Braga, X. Hu, J. Deng, M. Shur, R. Mickevicius

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引用次数: 1

摘要

基于绝缘栅晶体管的单片集成微波开关具有极小的漏电流，这对大型外围器件至关重要。与现有的射频开关类型相比，复合快/慢门设计和非线性补偿技术使绝缘门开关具有优越的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Insulated-Gate Integrated III-Nitride RF Switches

Monolithically integrated microwave switches based on insulated gate transistors benefit from extremely small leakage currents crucially important for large-periphery devices. Composite fast/slow gate design and nonlinearity compensation technique allow the insulated gate switches to achieving superior performance compared to existing RF switch types.

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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