利用高压双场板GaAs PHEMT工艺的高效率ka波段功率放大器MMIC

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062436

C. Campbell, D. Dumka, M. Kao, D. Fanning

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引用次数: 15

摘要

介绍了一种基于0.15um高压GaAs PHEMT工艺(HV15)的高效ka波段功率放大器MMIC的设计和性能。功率放大器MMIC的连续波(CW)实验结果表明，在35GHz时，饱和输出功率高达5W，相关功率增加效率为30%。

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High Efficiency Ka-Band Power Amplifier MMIC Utilizing a High Voltage Dual Field Plate GaAs PHEMT Process

The design and performance of a high efficiency Ka-band power amplifier MMIC utilizing a 0.15um high voltage GaAs PHEMT process (HV15) is presented. Experimental continuous wave (CW) in-fixture results for the power amplifier MMIC demonstrate up to 5W of saturated output power and 30% associated power added efficiency at 35GHz.

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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