表面活化键合制备和表征Si/ ~ 10-μm表面蚀刻Si结

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867078

K. Takemura, M. Morimoto, S. Nishida, J. Liang, N. Shigekawa

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摘要

采用反应离子刻蚀和表面活化键合的方法制备了Si/表面刻蚀Si p-n结。对其横截面的SEM观察表明，其台面高度约为13 μm。并测量了它们的电容电压和电流电压特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding

Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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