{"title":"在室温和液氦温度下抑制SOI mosfet扭结的双mosfet结构","authors":"M. Gao, J. Colinge, L. Lauwers, S. Wu, C. Claeys","doi":"10.1109/SOSSOI.1990.145685","DOIUrl":null,"url":null,"abstract":"The dual-MOSFET structure proposed consists of two SOI nMOSFETs, T/sub 1/ and T/sub 2/, in series, but measured as a single device (T/sub 1/ to the source and T/sub 2/ to the drain) with a common gate electrode. The N/sup +/ region in between T/sub 1/ and T/sub 2/ is kept floating. This structure can confine the kink effect to the upper transistor T/sub 2/ and thus successfully keeps the lower transistor T/sub 1/ from undergoing pinch-off, impact ionization, and the kink effect. If the channel length of T/sub 1/ is longer than that of T/sub 2/, then T/sub 1/ will dominate the overall output characteristics of the device. As a result, the kink effect is eliminated from the overall output characteristics. This structure can also confine the parasitic bipolar effect only to the upper transistor T/sub 2/. Since the base hole current of T/sub 2/ will recombine in the common N/sup +/ region, it cannot reach the base region of the lower transistor T/sub 1/. Results of measurements and simulation are given.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Dual-MOSFET structure for suppression of kink in SOI MOSFETs at room and liquid helium temperatures\",\"authors\":\"M. Gao, J. Colinge, L. Lauwers, S. Wu, C. Claeys\",\"doi\":\"10.1109/SOSSOI.1990.145685\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dual-MOSFET structure proposed consists of two SOI nMOSFETs, T/sub 1/ and T/sub 2/, in series, but measured as a single device (T/sub 1/ to the source and T/sub 2/ to the drain) with a common gate electrode. The N/sup +/ region in between T/sub 1/ and T/sub 2/ is kept floating. This structure can confine the kink effect to the upper transistor T/sub 2/ and thus successfully keeps the lower transistor T/sub 1/ from undergoing pinch-off, impact ionization, and the kink effect. If the channel length of T/sub 1/ is longer than that of T/sub 2/, then T/sub 1/ will dominate the overall output characteristics of the device. As a result, the kink effect is eliminated from the overall output characteristics. This structure can also confine the parasitic bipolar effect only to the upper transistor T/sub 2/. Since the base hole current of T/sub 2/ will recombine in the common N/sup +/ region, it cannot reach the base region of the lower transistor T/sub 1/. Results of measurements and simulation are given.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145685\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dual-MOSFET structure for suppression of kink in SOI MOSFETs at room and liquid helium temperatures
The dual-MOSFET structure proposed consists of two SOI nMOSFETs, T/sub 1/ and T/sub 2/, in series, but measured as a single device (T/sub 1/ to the source and T/sub 2/ to the drain) with a common gate electrode. The N/sup +/ region in between T/sub 1/ and T/sub 2/ is kept floating. This structure can confine the kink effect to the upper transistor T/sub 2/ and thus successfully keeps the lower transistor T/sub 1/ from undergoing pinch-off, impact ionization, and the kink effect. If the channel length of T/sub 1/ is longer than that of T/sub 2/, then T/sub 1/ will dominate the overall output characteristics of the device. As a result, the kink effect is eliminated from the overall output characteristics. This structure can also confine the parasitic bipolar effect only to the upper transistor T/sub 2/. Since the base hole current of T/sub 2/ will recombine in the common N/sup +/ region, it cannot reach the base region of the lower transistor T/sub 1/. Results of measurements and simulation are given.<>
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