{"title":"功率半导体器件的高能铝注入技术","authors":"Jai Ho Choi, K. Saito, T. Yokota, A. Watanabe","doi":"10.1109/ISPSD.1996.509479","DOIUrl":null,"url":null,"abstract":"A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1/spl times/10/sup 15/ atoms/cm/sup 2/, we obtained a p-region profile without using a film to prevent out-diffusion.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-energy Al implantation techniques for power semiconductor devices\",\"authors\":\"Jai Ho Choi, K. Saito, T. Yokota, A. Watanabe\",\"doi\":\"10.1109/ISPSD.1996.509479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1/spl times/10/sup 15/ atoms/cm/sup 2/, we obtained a p-region profile without using a film to prevent out-diffusion.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-energy Al implantation techniques for power semiconductor devices
A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1/spl times/10/sup 15/ atoms/cm/sup 2/, we obtained a p-region profile without using a film to prevent out-diffusion.
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