InGaP/GaAs薄膜热行为对工艺参数和工作条件敏感性的数值分析

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI:10.1109/CSICS.2017.8240444

A. P. Catalano, A. Magnani, V. d’Alessandro, L. Codecasa, N. Rinaldi, B. Moser, P. Zampardi

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引用次数: 7

摘要

本文对InGaP/GaAs薄膜热性能在层压(封装)环境下进行了广泛的数值分析。采用实验设计技术与快速准确的仿真能力相结合，量化了所有关键技术参数的影响，并探索了广泛的操作条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical analysis of the thermal behavior sensitivity to technology parameters and operating conditions in InGaP/GaAs HBTs

This paper presents an extensive numerical analysis of the thermal behavior of InGaP/GaAs HBTs in a laminate (package) environment. The combination between the Design of Experiments technique and a fast and accurate simulation capability is adopted to quantify the impact of all the key technology parameters and explore a wide range of operating conditions.

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2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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