PLD在双轴织构Ni带上制备高jc YBCO薄膜的CeO2膜的生长取向和表面形貌

Huaran Liu, Lin-fei Liu, Xiaokun Song, Dan Hong, Y. Wang, Yijie Li
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引用次数: 0

摘要

在真空室中利用脉冲激光在双轴织形(001)Ni带上沉积外延氧化铈缓冲层。采用x射线衍射(XRD)、扫描电镜(SEM)和原子力显微镜(AFM)等方法系统研究了微观结构与沉积参数的关系。我们发现CeO2缓冲层的最佳沉积参数非常适合制备高jc的YBCO薄膜。讨论了CeO2层厚度与裂纹形成的关系。
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Growth orientation and surface morphology of CeO2 films for high-Jc YBCO films on biaxially textured Ni tape by PLD
Epitaxial cerium oxide buffer layers were deposited on biaxially-textured (001) Ni tape using reel-to-reel pulsed laser deposition in a vacuum chamber. Relationship between microstructure and deposition parameters was systematically studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We found the optimal deposition parameters for CeO2 buffer layer which were quite suitable for preparing high-Jc YBCO films. The relationship between CeO2 layer thickness and crack formation has also been discussed.
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