单片,集总元件,单边带调制器

S. J. Parisi
{"title":"单片,集总元件,单边带调制器","authors":"S. J. Parisi","doi":"10.1109/MCS.1992.186031","DOIUrl":null,"url":null,"abstract":"The design and performance of a monolithic single sideband modulator that uses lumped element technology to achieve a compact circuit are described. The circuit comprises two balanced mixers, a branch line hybrid to input the carrier frequency, and a Wilkinson power combiner for summing the two mixer outputs. For this design, the carrier frequency was 6.9 GHz and the modulating signal was in the range of 0-500 MHz. The lower sideband was 6.4 to 6.9 GHz and the upper sideband was 6.9 to 7.4 GHz. Upper bounds on the performance of the modulator were derived from an assessment of the circuit components based on computer simulations.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Monolithic, lumped element, single sideband modulator\",\"authors\":\"S. J. Parisi\",\"doi\":\"10.1109/MCS.1992.186031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of a monolithic single sideband modulator that uses lumped element technology to achieve a compact circuit are described. The circuit comprises two balanced mixers, a branch line hybrid to input the carrier frequency, and a Wilkinson power combiner for summing the two mixer outputs. For this design, the carrier frequency was 6.9 GHz and the modulating signal was in the range of 0-500 MHz. The lower sideband was 6.4 to 6.9 GHz and the upper sideband was 6.9 to 7.4 GHz. Upper bounds on the performance of the modulator were derived from an assessment of the circuit components based on computer simulations.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.186031\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

介绍了一种采用集总元件技术实现电路紧凑的单片单边带调制器的设计和性能。该电路包括两个平衡混频器、用于输入载波频率的支路混合器和用于对两个混频器输出求和的威尔金森功率合成器。本次设计的载波频率为6.9 GHz,调制信号范围为0-500 MHz。下带为6.4 ~ 6.9 GHz,上带为6.9 ~ 7.4 GHz。调制器性能的上限是基于计算机模拟对电路元件的评估得出的。
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Monolithic, lumped element, single sideband modulator
The design and performance of a monolithic single sideband modulator that uses lumped element technology to achieve a compact circuit are described. The circuit comprises two balanced mixers, a branch line hybrid to input the carrier frequency, and a Wilkinson power combiner for summing the two mixer outputs. For this design, the carrier frequency was 6.9 GHz and the modulating signal was in the range of 0-500 MHz. The lower sideband was 6.4 to 6.9 GHz and the upper sideband was 6.9 to 7.4 GHz. Upper bounds on the performance of the modulator were derived from an assessment of the circuit components based on computer simulations.<>
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