高引脚数BGA封装ic中应力非连接球导致的异常ESD失效机制分析

Wen-Yu Lo, M. Ker
{"title":"高引脚数BGA封装ic中应力非连接球导致的异常ESD失效机制分析","authors":"Wen-Yu Lo, M. Ker","doi":"10.1109/IPFA.2003.1222760","DOIUrl":null,"url":null,"abstract":"An abnormal failure mechanism due to ESD stressing on the Non-Connected (NC) balls of a high-pin-count (>500 balls) BGA packaged IC is presented. Failure analyses including Scanning Electronic Microscopy (SEM) photographs and the measurement of current waveform during ESD zapping had been performed to give clear explanation on this unusual phenomenon. New protection solutions have been proposed to solve this problem in a BGA packaged IC product with an improvement ESD robustness, which can sustain 3-kV HBM and 300-V MM ESD stresses.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Analysis of abnormal ESD failure mechanism in high-pin-count BGA packaged ICs due to stressing non-connected balls\",\"authors\":\"Wen-Yu Lo, M. Ker\",\"doi\":\"10.1109/IPFA.2003.1222760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An abnormal failure mechanism due to ESD stressing on the Non-Connected (NC) balls of a high-pin-count (>500 balls) BGA packaged IC is presented. Failure analyses including Scanning Electronic Microscopy (SEM) photographs and the measurement of current waveform during ESD zapping had been performed to give clear explanation on this unusual phenomenon. New protection solutions have been proposed to solve this problem in a BGA packaged IC product with an improvement ESD robustness, which can sustain 3-kV HBM and 300-V MM ESD stresses.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

提出了一种高引脚数(>500球)BGA封装集成电路的非连接(NC)球在ESD应力作用下的异常失效机理。通过扫描电镜(SEM)照片和测量静电放电过程中的电流波形等故障分析,对这一异常现象进行了明确的解释。为了解决这一问题,BGA封装IC产品提出了新的保护方案,提高了ESD稳健性,可以承受3 kv HBM和300 v MM ESD应力。
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Analysis of abnormal ESD failure mechanism in high-pin-count BGA packaged ICs due to stressing non-connected balls
An abnormal failure mechanism due to ESD stressing on the Non-Connected (NC) balls of a high-pin-count (>500 balls) BGA packaged IC is presented. Failure analyses including Scanning Electronic Microscopy (SEM) photographs and the measurement of current waveform during ESD zapping had been performed to give clear explanation on this unusual phenomenon. New protection solutions have been proposed to solve this problem in a BGA packaged IC product with an improvement ESD robustness, which can sustain 3-kV HBM and 300-V MM ESD stresses.
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